TetraFET
D2029UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 ...
TetraFET
D2029UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313 ± 0.2
4 3
3.00 2.07 0.381 2 PL. 2 PL.
5
1.27
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED
0.360 ± 0.005
6
1.27 6.50 ± 0.15
2 1
0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15
7
1.27
8
0.10 R. TYP.
FEATURES
0.10 TYP. 0.508
0.10 TYP.
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE
VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM
Ceramic Material: Alumina. Parts can also be supplied with AlN or BeO for improved thermal resistance. Contact Semelab for details.
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail:
[email protected]
17.5W 65V ±20V 1A –65 to 150°C 200°C
Prelim. 2/99
D2029UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage ...