Document
TetraFET
D1260UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D (2 pls)
C E
B 12 3
A
54
G
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS RF FET 60W – 12.5V – 175MHz
SINGLE ENDED
PIN 1 PIN 3 PIN 5
H I
FM
K
DT
SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN
JN
GATE SOURCE (COMMON)
DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.46 E 5.21 F 7.62 G 21.59 H 3.94 I 12.70 J 0.13 K 24.76 M 2.59 N 4.06
Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25
Inches 0.250 DIA 0.125 DIA
0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160
Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Sourc.