Document
SHINDENGEN
General Purpose Rectifiers
•¡ O U T L I N E D I M E N S I O N S
SIL Bridges
D10XB80
800V 10A
FEATURES
Case : 3S Unit : mm
•œ Thin Single In-Line Package
•œ High current capacity with Small Package •œ High IFSM •œ Superior Thermal Conductivity APPLICATION •œ Switching power supply •œ Home Appliances, Office Equipment •œ Factory Automation, Inverter
RATINGS
•œ• @ Absolute Maximum Ratings (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction Temperature Tj 150 •Ž Maximum Reverse Voltage VRM 800 V IO 50Hz sine wave, R-load With heatsink Average Rectified Forward Current Tc=100•Ž 10 A 50Hz sine wave, R-load•@ Without heatsink Ta=25•Ž 2.7 Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25•Ž 120 A 2 I t 1ms•…t•ƒ10ms•@Tj=25•Ž A2s Current Squared Time 60 Dielectric Strength Vdis Terminals to case, AC 1 minute 2.5 kV Mounting Torque TOR • R i ecommended torque• F 0.5N¥m•j 0.8 N¥m •œ• @ Electrical Characteristics (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit VF IF Forward Voltage =5A, Pulse measurement, Rating of per diodeMax.1.1 V IR V R =V RM , Pulse measurement, Rating of per diode Max.10 ƒÊA Reverse Current ƒÆjc junction to case •@•@With heatsink Max.2.3 Thermal Resistance @ • @ Without heatsink ƒÆjl junction to lead • Max.6 •Ž/W ƒÆja junction to ambient Without heatsink Max.26
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D10XBx
Forward Voltage
10
Forward Current IF [A]
1 Tc=150 °C [TYP] Tc=25 °C [TYP]
Pulse measurement per diode
0.1 0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Forward Voltage VF [V]
D10XBx
40 35
Forward Power Dissipation
SIN
Forward Power Dissipation PF [W]
30 25 20 15 10 5 0
0
5
10
15
Average Rectified Forward Current IO [A]
Tj = 150 °C Sine wave
D10XBx
14
Derating Curve
Heatsink Tc Tc
Average Rectified Forward Current IO [A]
12 SIN 10
8
6
4
2
0 80
90
100
110
120
130
140
150
160
Case Temperature Tc [°C]
Sine wave R-load with heatsink
D10XBx
3.2
Derating Curve
Average Rectified Forward Current IO [A]
2.8 2.4 2 1.6 1.2 0.8 0.4 0
SIN PCB Glass-epoxy substrate Soldering land 5mmφ
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave R-load Free in air
D10XBx
200
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
150
non-repetitive, sine wave, Tj=25 °C before surge current is applied
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
.