TetraFET
D1019UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
1 2
4 3
A
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF...
TetraFET
D1019UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
1 2
4 3
A
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED
B
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS
D G H
LOW Crss SIMPLE BIAS CIRCUITS
E F
PIN 1 PIN 3
DRAIN GATE
PIN 2 PIN 4
SOURCE SOURCE
LOW NOISE HIGH GAIN – 16 dB MINIMUM
DIM A B C D E F G H
mm 26.16 5.72 45° 7.11 0.13 1.52 0.43 7.67
Tol. 0.13 0.13 5° 0.13 0.02 0.13 0.20 REF
Inches 1.030 0.225 45° 0.280 0.005 0.55 0.060 0.120
Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 50W 70V ±20V 5A –65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
6/99
D1019UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 20W VD...
