D1011UK

TetraFET D1011UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES H K L J E F G M SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM Dim. A B C D E F G H J K L M N P mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57 Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180 Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003 APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 30W 70V ±20V 5A –65 to 150°C 200°C Prelim. 1/96 D1011UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source...