D1006UK

TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A E 1 2 3 F G 6 J 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN D H M Q N K O P SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 14 dB MINIMUM DV PIN 1 PIN 3 PIN 5 DIM A B C D E F G H J K M N O P Q SOURCE SOURCE GATE mm 9.09 19.3 45° 5.71 1.65R 9.78 20.32 19.30 1.52R 10.77 22.86 3.17 0.13 4.19 6.35 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.02 0.13 REF PIN 2 PIN 4 PIN 6 Inches 0.358 0.760 45° 0.225 0.065R 0.385 0.800 0.760 0.060R 0.424 0.900 0.125 0.005 0.165 0.250 DRAIN SOURCE SOURCE Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.001 0.005 REF APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 220W 70V ±20V 30A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/00 D1006UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Cu...