CZT3904NPN

CZT3904 NPN CZT3906 PNP COMPLEMENTARY SILICON TRANSISTORS Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CZT3904, CZT3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. SOT-223 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA CZT3904 60 40 6.0 200 2.0 -65 to +150 62.5 CZT3906 40 40 5.0 UNITS V V V mA W oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) CZT3904 MIN MAX 50 60 40 6.0 0.20 0.30 0.65 0.85 0.95 40 70 100 300 60 30 CZT3906 MIN MAX 50 40 40 5.0 0.25 0.40 0.65 0.85 0.95 60 80 100 300 60 30 SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCE=30V, VEB=3.0V IC=10µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA UNITS nA V V V V V V V 308 SYMBOL fT Cob Cib hie hre hfe hoe NF td tr ts tf CZT3904 TEST CONDITIONS MIN MAX VCE=20V, IC=10mA, f=100MHz 300 VCB=5.0V, IE=0, f=1.0MHz 4.0 VBE=0.5V, IC=0, f=1.0MHz 8.0 VCE=10V, IC=1.0mA, f=1.0kHz 1.0 10 VCE=10V, IC=1.0mA, f=1.0kHz 0.5 8.0 VCE=10V, IC=1.0mA, f=1....