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D4SB60 Dataheets PDF



Part Number D4SB60
Manufacturers Shindengen Electric Mfg.Co.Ltd
Logo Shindengen Electric Mfg.Co.Ltd
Description General Purpose Rectifiers
Datasheet D4SB60 DatasheetD4SB60 Datasheet (PDF)

SHINDENGEN General Purpose Rectifiers SIL Bridges D4SB60L 600V 4A OUTLINE DIMENSIONS Case : 3S (Unit : mm) RATINGS •œAbsolute Maximum Ratings • I i f not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction TemperatureTj 150 •Ž Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current IO 50Hz sine wave, R-load With heatsink Tc=111•Ž 4 A 50Hz sine wave, R-load Without heatsink Ta=25•Ž 2.5 Peak Surge Forward Current IFSM 50Hz.

  D4SB60   D4SB60



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SHINDENGEN General Purpose Rectifiers SIL Bridges D4SB60L 600V 4A OUTLINE DIMENSIONS Case : 3S (Unit : mm) RATINGS •œAbsolute Maximum Ratings • I i f not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction TemperatureTj 150 •Ž Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current IO 50Hz sine wave, R-load With heatsink Tc=111•Ž 4 A 50Hz sine wave, R-load Without heatsink Ta=25•Ž 2.5 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, 150 Tj=25 A •Ž 2t 2ms•…t•ƒ10ms•@‚sj = 25•Ž Current Squared Time I 80 A2s Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque R i ecommended torque : 0.5N¥m•j TOR • 0.8 N¥m •œElectrical Characteristics • I if not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage =2A, Pulse measurement, Rating of per diode VF I F Max.0.95 V Reverse Current IR V =V , Pulse measurement, Rating of per diode Max.10 ƒÊA R RM Reverse Recovery Time trr I =0.1A,R =0.1A, I Rating of per diode Max.10 ƒÊs F ƒÆjc junction to case •@ •@With heatsink Max.5.5 Thermal Resistance ƒÆjl junction to lead •@ •@ Without heatsink Max.6 •Ž/W ƒÆja junction to ambient Without heatsink Max.30 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D4SB60L Forward Voltage 10 Forward Current IF [A] Tc=150 °C [TYP] Tc=25 °C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D4SB60L 10 Forward Power Dissipation Forward Power Dissipation PF [W] 8 SIN 6 4 2 0 0 1 2 3 4 5 6 Average Rectified Forward Current IO [A] Tj = 150 °C Sine wave D4SB60L 6 Derating Curve Average Rectified Forward Current IO [A] 5 SIN 4 3 2 Heatsink Tc Tc 1 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] Sine wave R-load with heatsink D4SB60L 4 Derating Curve Average Rectified Forward Current IO [A] 3.5 PCB 3 SIN 2.5 2 1.5 1 0.5 0 Soldering land 5mmφ 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 600V 0 0 IO VR tp D=tp /T T D4SB60L 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=25 °C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] .


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