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D45C11 Dataheets PDF



Part Number D45C11
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Current Driver Transistor
Datasheet D45C11 DatasheetD45C11 Datasheet (PDF)

D45C11 — PNP Current Driver Transistor D45C11 PNP Current Driver Transistor January 2010 Features • This device is designed for power amplifier, regulator and switching circuits where speed is important. • Sourced from Process 5P. • NZT751 for characteristics. 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage J.

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D45C11 — PNP Current Driver Transistor D45C11 PNP Current Driver Transistor January 2010 Features • This device is designed for power amplifier, regulator and switching circuits where speed is important. • Sourced from Process 5P. • NZT751 for characteristics. 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range -80 V -4.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 60 480 2.1 62.5 Units W mW/°C °C/W °C/W © 2009 Fairchild Semiconductor Corporation D45C11 Rev. B2 1 www.fairchildsemi.com D45C11 — PNP Current Driver Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0 ICES Collector-Cutoff Current VCE = -90V, IE = 0 IEBO Emitter-Cutoff Current VEB = -5.0V, IB = 0 On Characteristics hFE DC Current Gain VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Small Signal Characteristics VCE = -1.0V, IC = -0.2A VCE = -1.0V, IC = -1.0A IC = -1.0A, IB = -50mA IC = -1.0A, IB = -100mA Cob Output Capacitance VCB = -10V, f = 1.0MHz fT Current Gain - Bandwidth Product IC = -20mA, VCE = -4.0V Min. -80 40 20 32 Max. -10 -100 120 -0.5 -1.3 125 Units V μA μA V V pF MHz © 2009 Fairchild Semiconductor Corporation D45C11 Rev. B2 2 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore¥ FETBench¥ FlashWriter®* FPS¥ F-PFS¥ FRFET® Global Power ResourceSM Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM¥ PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™ ®* The Power Franchise® TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiti.


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