Document
D45C11 — PNP Current Driver Transistor
D45C11 PNP Current Driver Transistor
January 2010
Features
• This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from Process 5P. • NZT751 for characteristics.
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO IC
TJ, TSTG
Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
-80
V
-4.0
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max. 60 480 2.1 62.5
Units
W mW/°C °C/W °C/W
© 2009 Fairchild Semiconductor Corporation
D45C11 Rev. B2
1
www.fairchildsemi.com
D45C11 — PNP Current Driver Transistor
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0
ICES
Collector-Cutoff Current
VCE = -90V, IE = 0
IEBO
Emitter-Cutoff Current
VEB = -5.0V, IB = 0
On Characteristics
hFE
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage Small Signal Characteristics
VCE = -1.0V, IC = -0.2A VCE = -1.0V, IC = -1.0A
IC = -1.0A, IB = -50mA
IC = -1.0A, IB = -100mA
Cob
Output Capacitance
VCB = -10V, f = 1.0MHz
fT
Current Gain - Bandwidth Product IC = -20mA, VCE = -4.0V
Min. -80
40 20
32
Max.
-10 -100 120 -0.5 -1.3 125
Units
V μA μA
V V
pF MHz
© 2009 Fairchild Semiconductor Corporation
D45C11 Rev. B2
2
www.fairchildsemi.com
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