DBF60

Ordering number:EN2799A DBF60 Silicon Diffused Junction Type 6.0A Single-Phase Bridge Rectifier Features · Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=6.0A. Package Dimensions unit:mm 1191 [DBF60] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature Symbol V RM IO IFSM Tj Tstg Conditions DBF60C 200 → → → → DBF60G 600 6 2.8 120 150 Unit V A A A Tc=110˚C, with 125×125×1.5mm3 AI fin Ta=25˚C, without fin 50Hz sine wave, 1 cycle ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C, per constituent element of bridge. Parameter Forward Voltage Reverse Current Thermal Resistance (Junction-Ambient) Thermal Resistance (Junction-Case) Symbol VF IR Rth(j-a) Rth(j-c) IF=2.5A VR:At each VRM Without fin With AI fin Conditions Ratings min typ max 1.05 10 26 3.4 Unit V µA ˚C/W ˚C/W Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA(KT)71095GI(KOTO) 5108TA, TS 8-2226 No.2799-1/2 DBF60 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly ca...