DBF20

Ordering number:EN2817A DBF20 Silicon Diffused Junction Type 2.0A Single-Phase Bridge Rectifier Features · Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V. · Average rectified current:IO=2.0A. Package Dimensions unit:mm 1202 [DBF20] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions DBF20B 100 → → → → → DBF20C 200 → → → → → DBF20E 400 → → → → DBF20G 600 2.0 1.5 60 150 Unit V A A A Tc=114˚C, with 50×50×1.5mm3 AI fin Ta=25˚C, without fin 50Hz sine wave, 1 cycle ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C, per constituent element of bridge. Parameter Forward Voltage Reverse Current Thermal Resistance (Junction-Ambient) Thermal Resistance (Junction-Case) Symbol VF IR Rth(j-a) Rth(j-c) IF=0.75A VR:At each VRM Without fin With AI fin Conditions Ratings min typ max 1.05 10 75 10 Unit V µA ˚C/W ˚C/W Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/N118TA, TS No.2817-1/2 DBF20 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may di...