DBF10

Ordering number:EN2948 DBF10 Silicon Diffused Junction Type 1.0A Single-Phase Bridge Rectifier Features · Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V. · Average rectified current:IO=1.0A. Package Dimensions unit:mm 1210 [DBF10] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions DBF10B 100 50Hz sine wave, resistive load, mounted on PCB 50Hz sine wave, nonrepetitive, 1cycle peak value → → → → DBF10C 200 → → → → DBF10E 400 → → → DBF10G 600 1.0 30 150 Unit V A A ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Reverse Current Thermal Resistance Symbol VF IR θji θja IF=0.5A VR=VRM Junction-lead Junction-ambient Conditions Ratings min typ max 1.05 10 16 62 Unit V µA ˚C/W ˚C/W SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/N098TA, TS No.2948-1/2 DBF10 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full ...