DBA250

Ordering number:EN2145B DBA250 Silicon Diffused Junction Type 25.0A Single-Phase Bridge Rectifier Features · Plastic molded structure. · High reliability attained by glass passivation. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=25.0A. Package Dimensions unit:mm 1162 [DBA250] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Insulation Voltage Symbol VRM IO IFSM Tj Tstg VIS Ta=40˚C Ta=40˚C, with 300×300×3.0mm3 Cu fin 50Hz sine wave, 1cycle Conditions DBA250C 200 → → → → → → DBA250G 600 6.0 25.0 400 150 –40 to +150 2 Unit V A A A ˚C ˚C kV Electrical Characteristics at Ta = 25˚C Parameter Forward Voltage Reverse Current Thermal Resistance Symbol VF IR Rth(j-c) IF=12.5A* VR:At each VRM* Junction-Case Conditions Ratings min typ max 1.05 10 1.5 Unit V µA ˚C/W Note:Tightening torque : 0.98N·m max. Note*:Per constituent element of bridge. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/82595GI (KOTO) 3089MO, TS No.2145-1/2 DBA250 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property l...