SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB1012S
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
VOLTAGE 1...
Description
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB1012S
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
VOLTAGE 1200 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * * Surge overload rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram
.310 (7.9) .290 (7.4) .255 (6.5) .245 (6.2)
DB-S
MECHANICAL DATA:
* Epoxy : UL flammability classification 94V-0
.042 (1.1) .038 (1.0)
.013 (.330) .003 (.076) .410 (10.4) .360 (9.4)
.009 (9.4)
.060 (1.524) .040 (1.016)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
.335 (8.51) .320 (8.13) .135 (3.4) .115 (2.9) .205 (5.2) .195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current at T A = 40 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range I FSM T J, T STG 50 -55 to + 150 Amps
0
SYMBOL VRRM VRMS VDC IO
DB1012S 1200 840 1200 1.0
UNITS Volts Volts Volts Amps
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERIS...
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