DatasheetsPDF.com

DB1012S

Rectron Semiconductor

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION DB1012S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE 1...


Rectron Semiconductor

DB1012S

File Download Download DB1012S Datasheet


Description
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION DB1012S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE 1200 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Surge overload rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram .310 (7.9) .290 (7.4) .255 (6.5) .245 (6.2) DB-S MECHANICAL DATA: * Epoxy : UL flammability classification 94V-0 .042 (1.1) .038 (1.0) .013 (.330) .003 (.076) .410 (10.4) .360 (9.4) .009 (9.4) .060 (1.524) .040 (1.016) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .335 (8.51) .320 (8.13) .135 (3.4) .115 (2.9) .205 (5.2) .195 (5.0) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Current at T A = 40 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range I FSM T J, T STG 50 -55 to + 150 Amps 0 SYMBOL VRRM VRMS VDC IO DB1012S 1200 840 1200 1.0 UNITS Volts Volts Volts Amps C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERIS...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)