DAN222

DAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. http://onsemi.com Fast trr Low CD Available in 8 mm Tape and Reel SOT–416/SC–90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT CATHODE 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol VR VRM IF IFM IFSM(1) Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc 1 2 ANODE THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Range 1. t = 1 µS Symbol PD TJ Tstg Max 150 150 – 55 to +150 Unit mW °C °C 1 3 2 SOT–416 CASE 463 STYLE 3 DEVICE MARKING N9 ORDERING INFORMATION Device DAN222 Package SOT–416 Shipping 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2000 1 March, 2000 – Rev. 2 Publication Order Number: DAN222/D DAN222 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 mA IR = 100 µA VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR Min — — 80 — — Max 0.1 1.2 — 3.5 ...