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DEIC420

IXYS Corporation

20 Ampere Low-Side Ultrafast RF MOSFET Driver

DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features • Built using the advantages and compatibility of CMOS a...


IXYS Corporation

DEIC420

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Description
DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes Latch-Up Protected High Peak Output Current: 20A Peak Wide Operating Range: 8V to 30V Rise And Fall Times of <4ns Minimum Pulse Width Of 8ns High Capacitive Load Drive Capability: 4nF in <4ns Matched Rise And Fall Times 32ns Input To Output Delay Time Low Output Impedance Low Quiescent Supply Currentt Description TheDEIC420 is a CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications at up to 45MHz, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The DEIC420 can source and sink 20A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse widths of 8ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in the DEIC420. Its features and wide safety margin in operating voltage and power make the DEIC420 unmatched in performance and value. The DEIC420 is packaged in DEI's low inductance RF package incorporating DEI's patented (1) RF layout techniques to minimize stray lead inductances for optimum switching performance. For applications that do not require the power dissipation of the DEIC420, the driv...




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