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LTE42012R

NXP
Part Number LTE42012R
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 27, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of Ju...
Datasheet PDF File LTE42012R PDF File

LTE42012R
LTE42012R

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell improves input impedance and allows an easier design of wideband circuits.
APPLICATIONS • Common emitter class-A power a...


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