LTE42008R

DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Input matching cell improves input impedance and allows an easier design of circuits. APPLICATION Common emitter class-A linear power amplifiers up to 4.2 GHz. PINNING - SOT440A PIN 1 2 3 collector base LTE42008R DESCRIPTION emitter connected to flange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A (CW) linear f (GHz) 4.2 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the re...