LTE21015R

DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Input matching cell allows an easier design of circuits. APPLICATIONS Common emitter class-A linear power amplifiers up to 2 GHz. 2 3 olumns LTE21015R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Top view Marking code: 436 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A f (GHz) 2 VCE (V) 16 IC (mA) 250 PL1 (W) ≥1.5 Gpo (dB) ≥8.5 Zi; ZL (Ω) see Figs 6 and 7 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose o...