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MIG75J201H

Part Number	MIG75J201H
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Published	Mar 26, 2005
Detailed Description	MIG75J201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75J201H High Power Switching Applications Motor C...
Datasheet	MIG75J201H PDF File

Overview

MIG75J201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75J201H High Power Switching Applications Motor Control Applications l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 2.
5 V (Max) toff = 3.
0 µs (Max) trr = 0.
30 µs (Max) l Package dimensions : TOSHIBA 2-110A1A l Weight : 520 g Equivalent Circuit 1 2001-05-29 MIG75J201H Maximum Ratings (Tj = 25°C ) Stage Characteristic Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipat...

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MIG75J201H TOSHIBA Intelligent Power Module Silicon N Channel IGBT - Toshiba Semiconductor

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