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MIG150J7CSB1W

Toshiba Semiconductor

TOSHIBA Intelligent Power Module Silicon N Channel IGBT

MIG150J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150J7CSB1W (600V/150A 7in1) High Power Switchi...


Toshiba Semiconductor

MIG150J7CSB1W

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Description
MIG150J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150J7CSB1W (600V/150A 7in1) High Power Switching Applications Motor Control Applications · · · · · · Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. The electrodes are isolated from the case Low thermal resistance VCE (sat) = 1.9 V (typ.) UL recognized: File No.E87989 Weight: 278 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT GND VS OUT W 1. 8. 15. VD (U) GND (V) Open 2. 9. 16. V FO (U) VD (W) IN (B) 3. 10. 17. IN (U) FO (W) IN (X) U 4. 11. 18. GND (U) IN (W) IN (Y) B 5. 12. 19. VD (V) GND (W) IN (Z) 6. 13. 20. FO (V) VD (L) GND (L) N 7. 14. IN (V) FO (L) P 1 2001-11-13 MIG150J7CSB1W Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2 2001-11-13 MIG150J7CSB1W Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) ...




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