AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-814A2 is an infrared emitting diode utilizing Ga...
Description
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.
6.70±0.20 (.264±.008) φ 5.00±0.20 (.197±.008)
MIE-814A2
Package Dimensions
Unit: mm ( inches )
1.30 max (.051)
Features
l l l l
2.00(.079)
0.50 (.020)
28 typ (1.102)
High radiant power and high radiant intesity Suitable for DC and high pulse current operation Peak wavelength λP =940 nm Good spectral matching to Si-Photodetector
2.54NOM. (.100) 2.00±1.00 (.079±.039)
C
A
NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25 C Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150 1 100 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds
o o o o o
Unit mW A mA V
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-814A2
Optical-Electrical Characteristics
@ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λ ∆λ 2 θ1/2 940 50 50 Min. 1 Typ . 2 1.32 1.45 100 Max. Unit mW/sr V µA nm nm deg .
Typical Optical-Electrical Chara...
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