MIE-544L3

GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-544L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package. 7.62 (.300) MIE-544L3 Unit : mm (inches ) Package Dimensions φ5.05 (.200) 5.47 (.215) 5.90 (.230) 1.00 (.040) FLAT DENOTES CATHODE Features l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 (φ 5mm) package Peak wavelength λP =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 40° A 2.54 (.100) 1.00MIN (.040) l l l l C l Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-544L3 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λ ∆λ 2 θ1/2 880 80 40 Min. Typ . 1.8 1.4 1.7 100 Max. Unit mW/...