MIE-524A4

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-524A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package. 7.62 (.300) MIE-524A4 Package Dimensions φ 5.05 (.200) Unit : mm (inches ) 5.47 (.215) 5.90 (.230) 1.00 (.040) FLAT DENOTES CATHODE Features l 23.40 MIN. (.920) 0.50 TYP. (.020) High radiant power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package, radiation angle : 20° Peak wavelength λp = 940 nm Good spectral matching to si-photodetector l l 1.00MIN (.040) 2.54 (.100) l l A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-524A4 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λp ∆λ 2θ1/2 94...