MIE-516L3U

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-516L3U is infrared emitting diodes in GaAlAs technology molded in pastel blue transparent package. φ5.05 (.200) MIE-516L3U Unit: mm (inches) Package Dimensions 5.47 (.215) 7.62 (.300) Features l 5.90 (.230) 1.0 (.040) SEE NOTE 2 Suitable for DC and high pulse current operation Standard T-1 3/4 (φ 5mm) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiant angle : 16° l FLAT DENOTES CATHODE l l 0.50 TYP. (.020) 23.40 MIN. (.920) l 1.00MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-516L3U Optical-Electrical Characteristics '@ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Relative Radiant Intensity Test Conditions IF=20mA IF=50mA IF=200mA VR= 5V IF=20mA IF=20mA IF=20mA 1 Symbol Ie VF IR λ ∆λ 2θ1/2 Forward Current IF (mA) Min. Typ . 3.2 1.4 1....