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MIE-514H4 Dataheets PDF



Part Number MIE-514H4
Manufacturers Unity Opto Technology
Logo Unity Opto Technology
Description GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet MIE-514H4 DatasheetMIE-514H4 Datasheet (PDF)

GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-514H4 is a GaAlAs infrared LED having a peak wavelength at 850 nm . It feature ultra-high power, high response speed and molded in water clear plastic package, the MIE-514H4 have greatly improved long-distance characteristics as well as as significantly increased its range of applicability. 1.00 (.040) SEE NOTE 2 7.62 (.300) φ5.05 (.200) MIE-514H4 Unit: mm (inches) Package Dimensions 5.47 (.215) 5.90 (.230) Featur.

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GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-514H4 is a GaAlAs infrared LED having a peak wavelength at 850 nm . It feature ultra-high power, high response speed and molded in water clear plastic package, the MIE-514H4 have greatly improved long-distance characteristics as well as as significantly increased its range of applicability. 1.00 (.040) SEE NOTE 2 7.62 (.300) φ5.05 (.200) MIE-514H4 Unit: mm (inches) Package Dimensions 5.47 (.215) 5.90 (.230) Features l FLAT DENOTES CATHODE Ultra-High radiant incidence High response speed High modulation bandwidth Standard T-1 3/4 ( φ 5mm ) package Radiation angle : 15° Peak wavelength λp = 850 nm A 1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23.40 MIN (.920) l l l l l C Applications l Free air transmission systems with high -speed response NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. l SIR Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-514H4 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth Half View Angle Rise Time Fall Time Relative Radiant Intensity 1 Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA IF=50mA IF=50mA Symbol Min. Typ. 8 1.5 850 30 15 20 30 Max. 1.8 100 Unit mW/sr V µA nm nm deg . nsec nsec Ie VF IR λp ∆λ 2θ1/2 Tr Tf Typical Optical-Electrical Characteristic Curves 0.5 0 750 850 950 Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION 100 3 Forward Current (mA) 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8 Output Power To Value IF=20mA 2.5 2 1.5 1 0.5 0 -40 -20 0 20 40 o 60 Forward Voltage(V) FIG.2 FORWARD CURRENT VS. FORWARD VOLTAGE Output Power Relative To Value at IF=20mA Relative Radiant Intensity 5 4 3 2 1 0 0 20 40 60 80 100 Ambient Temperature TA ( C) FIG.3 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE 0° 10° 20° 30° 40° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 50° 60° 70° 80° 90° Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT FIG.5 RADIATION DIAGRAM 11/17/2000 .


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