GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-406L3U is an infrared emitting diode with Ga...
Description
GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-406L3U is an infrared emitting diode with GaAlAs / GaAlAs die technology molded in a pastel blue transparent plastic package.
MIE-406L3U
Unit : mm (inches )
φ4.75 (.187)
Package Dimensions
45° CATHODE INDICATOR
5.60 (.221)
.70 (.028) .25 MAX (.059 ) 25.00 MIN (.984) .50 TYP. (.020) 1.00 MIN (.040) 2.54 (.100) 5.46 (.215)
Features
l
Standard TO-46 package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiant angle : 25°
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C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings @ TA=25oC
Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
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Unit mW A mA V
Unity Opto Technology Co., Ltd.
11/18/2000
MIE-406L3U
Optical-Electrical Characteristics '@ TA=25oC
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR= 5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λp ∆λ 2θ1/2
Forward Current IF (mA)
Min. -
Typ . 2.2 1.4 880 80 25
Max. 1.70 100 -
Unit mW/sr V µA nm nm deg.
Typical Optical-Electrical Characte...
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