MIE-304L3

GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE Description The MIE-304L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package. £r 3.00 (.118) MIE-304L3 Package Dimensions Unit : mm (inches ) 5.25 (.207) 1.00 (.040) 4.00 (.157) SEE NOTE 2 0.80 ±0.50 (.031±.020) FLAT DENOTES CATHODE Features l l l l l 23.40MIN. (.920) High power and high radiant intensity Suitable for DC and high pulse current operation Standard T-1 ( φ 3mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector A 2.54 (.100) SEE NOTE 3 0.50 TYP. (.020) 1.00MIN. (.040) C Notes : 1. Tolerance is ±0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.8 mm (.031") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55oC to +100oC -55oC to +100oC 260 C for 5 seconds o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-304L3 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λP ∆λ 2 θ 1/2 Min. Typ . 2.2 1.40 Max. Unit mW/sr V µA nm nm deg . - 1.7 100 880...