GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-304H4 is a GaAlAs infrared LED having a peak wavelength a...
Description
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-304H4 is a GaAlAs infrared LED having a peak wavelength at 850nm molded in water clear plastic package. The forward voltage at low current and at high pulse current roughly correspond to the low values of the standard technology.
0.80 (.032) SEE NOTE 2 5.40 (.213)
MIE-304H4
Package Dimensions
3.00 (.118)
Unit : mm (inches )
4.00 (.158)
0.50 (.020) FLAT DENOTES CATHODE
23.40MIN. (.921)
Features
l l l l
0.50 TYP. (.020) 1.00 MIN. (.039) 2.54NOM. (.100) SEE NOTE 3
Ultra-high radiant intensity High response speed Standard T-1 ( φ 3mm ) package, radiant angle : 25° Peak wavelength λp = 850 nm
A
C
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.5 mm (.019") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
o o
Unit mW A mA V
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-304H4
Optical-Electrical Characteristics
@ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λp ∆λ 2θ1/2 Min. Typ . 3.5 1.5 Max. Unit mW/s...
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