MIE-184H4

GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE Description The MIE-184H4K is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-184H4K has greatly improved long-distance characteristics as well as significantly increased its range of applicability . 3.00 (.118) 3.30 (.130) 1.40 (.055) 1.60 (.063) R 1.70 (.067) φ1.80 (.071) 2.40 (.094) MIE-184H4 Package Dimensions Unit : mm (inches ) SEE NOTE 2 Features l l l l Ultra-High radiant intensity High response speed Special 1.8mm package, radiant angle : 35o Peak wavelength λP =850 nm 2.54 NOM. (.100) A 0.50 TYP. (.020) 25.40MIN. (1.000) 1.00MIN. (.040) SEE NOTE 3 Application l l C Data communication SIR Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 0.4 mm (.015") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-184H4K Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forwar...