MIE-114H4

AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE Description The MIE-114H4 is a AlGaAs infrared emitting diode molded in clear, lensed side looking package . The MIE-114H4 provides a broad range of intensity selection . 5.72±0.2 (.225±.008) MIE-114H4 Unit: mm ( inches ) Package Dimensions 4.45±0.20 (.175±.008) 2.22 (.087) (.087) 1.22±0.10 (.048±.004) 1.55±0.02 (.061±.008) 0.76±0.10 (.030±.008) 12.7 MIN. (.500) Features l CATHODE 0.5 TYP. (.020) 1.0 MIN. (.040) 2.54 NOM. (.100) SEE NOTE 3 High power Mechanically and spectrally matched to the MID-11422 of phototransistor . l C A NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25 C Parameter Power Dissipation Peak Forward Current Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 75 1 50 5 -55 C to + 100 C -55oC to + 100oC 260 C for 5 seconds o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 02/04/2002 MIE-114H4 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Incidance Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Test Conditions IF=20mA IF=20mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ee VF IR λp ∆λ 2θ1/2 Min. Typ . 1.0 1.5 Max. Unit mW/cm2 V µA nm nm deg . 1.6 100 - 850 30 80 - Typical Optical-Electrical Characteristic Curves Relative Radiant Inten...