AM81214-006
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER...
AM81214-006
RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W MIN. WITH 10 dB GAIN
.310 x .310 2LF L (S064) hermetically sealed ORDER CODE AM81214-6 BRANDING 81214-6
DESCRIPTION The AM81214-006 device is a high power Class C
transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM81214-006 is supplied in the grounded IMPAC™ Hermetic Metal/Ceramic package with internal input/output matching structures.
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 °C)
Symbol Parameter Value Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100 °C)
16.7 0.82 32 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 9.0 °C/W
*Applies only to rated RF amplifier operation
AM81214-006
ELECTRICAL SPECIFICATIONS (T case = 25°C) STATIC
Symbo l Test Con dition s Valu e Min. T yp. Max. Un it
BVCB...
