AM80610-030
RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER...
AM80610-030
RF & MICROWAVE
TRANSISTORS UHF COMMUNICATIONS APPLICATIONS
. . . . .
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN
.400 x .400 2NLF L (S042) hermetically sealed ORDER CODE AM80610-030 BRANDING 80610-30
DESCRIPTION The AM80610-030 is a high power, common base
NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment. The AM80610-030 is provided in the industrystandard, metal/ceramic AMPAC™ hermetic package.
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 °C)
Symbol Parameter Value Unit
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 50°C)
57 3.0 32 200 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W
*Applies only to rated RF amplifier operation
AM80610-030
ELECTRICAL SPECIFICATIONS (T case = 25°C)
STATIC
Symbo l T est Con ditio ns Value Min. Typ . Max. Un it
BVCBO BVEBO BVCER ICES hFE
IC = 20 mA IE = 2 mA IC = 40 mA VBE = 0 V VCE = 5 V
IE = 0 mA IC = 0 mA RBE = 10 Ω VCE = 28 V IC = ...
