AT29BV040A

AT29BV040A Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programming Fast Read Access Time - 250 ns Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current Sector Program Operation Single Cycle Reprogram (Erase and Program) 2048 Sectors (256 bytes/sector) Internal Address and Data Latches for 256-Bytes Two 16 KB Boot Blocks with Lockout Fast Sector Program Cycle Time - 20 ms Max. Internal Program Control and Timer DATA Polling for End of Program Detection Typical Endurance > 10,000 Cycles CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges Description The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 250 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 20 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 2.7-volt-only Flash memories. To allow for simple in-system reprogrammability, the AT29BV040A does not require high input voltages for programming. The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is...