Silicon Switching Diode Array
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BAV74
Silicon Switching Diode Array
For high-speed switching applications Common cathode
3
2 ...
Description
www.DataSheet4U.com
BAV74
Silicon Switching Diode Array
For high-speed switching applications Common cathode
3
2 1
3 1 2
EHA07004
VPS05161
Type BAV74
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current
Marking JAs 1 = A1
Pin Configuration 2 = A2 3 = C1/2
Package SOT23
Symbol VR VRM IF IFS Ptot Tj Tstg
Value 50 50 200 4.5 250 150 -65 ... 150
Unit V mA A mW °C
Surge forward current, t = 1 s Total power dissipation, TS = 35 °C Junction temperature Storage temperature
Thermal Resistance
Junction - soldering point1)
RthJS
460
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-31-2001
BAV74
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time measured at IR = 1mA IF = 10 mA, IR = 10 mA, RL = 100 , trr 4 CD 2 IR 100 IR 0.1 VF 1 V(BR) 50 typ. max.
Unit
V
µA
pF ns
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00019
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns, C 1pF
2
Jul-31-2001
BAV74
Forward current IF = f (TS )
Reverse current IR = f (TA)
220
mA
10 5 nA
BAV 74
EHB00070
180 160
ΙR
10 4 5 max.
VR = 70 V
IF
140 120 100 80 60 40 2...
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