Silicon Switching Diode
Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orienta...
Description
Silicon Switching Diode For high-speed switching applications Common cathode configuration BAV70S / U: For orientation in reel see
package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101
BAV70...
BAV70 BAV70W
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BAV70S BAV70U
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Type BAV70 BAV70S BAV70U BAV70W
Package SOT23 SOT363 SC74 SOT323
Configuration common cathode double common cathode double common cathode common cathode
1Pb-containing package may be available upon special request
Marking A4s A4s A4s A4s
1 2007-09-19
BAV70...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs
VR VRM IF IFSM
t = 1 ms
t = 1 s single
t = 1 s double
Value 80 85 200
4.5 1 0.5 0.75
Total power dissipation BAV70, TS ≤ 33°C BAV70S, TS ≤ 85°C BAV70U, TS ≤ 90°C BAV70W, TS ≤ 103°C
Junction temperature Storage temperature
Thermal Resistance Parameter Junction - soldering point1) BAV70 BAV70S BAV70U BAV70W
Ptot
Tj Tstg Symbol RthJS
250 250 250 250 150 -65 ... 150
Value
≤ 460 ≤ 260 ≤ 240 ≤ 190
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit V mA A
mW
°C
Unit K/W
2 2007-09-19
BAV70...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage I(BR) = 100 µA
V(BR)
85 -
-V
Reverse current
VR...
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