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BAV21WS Dataheets PDF



Part Number BAV21WS
Manufacturers General Semiconductor
Logo General Semiconductor
Description SMALL SIGNAL DIODES
Datasheet BAV21WS DatasheetBAV21WS Datasheet (PDF)

NEW PRODUCT NEW PRODUCT NEW PRODUCT BAV19WS THRU BAV21WS SMALL SIGNAL DIODES SOD-323 FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the Mini-MELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designation BAS19 - BAS21 and the SOD-123 case with the type designation BAV19W-BAV21W. .012 (0.3) .112 (2.85) .100 (2.55) .07.

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NEW PRODUCT NEW PRODUCT NEW PRODUCT BAV19WS THRU BAV21WS SMALL SIGNAL DIODES SOD-323 FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the Mini-MELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designation BAS19 - BAS21 and the SOD-123 case with the type designation BAV19W-BAV21W. .012 (0.3) .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Cathode Mark Top View max. .049 (1.25) max. .004 (0.1) min. .010 (0.25) max. .006 (0.15) .059 (1.5) .043 (1.1) MECHANICAL DATA Case: SOD-323 Plastic Case Weight: approx. 0.004 g Marking Code: BAV19WS=A8 BAV20WS=A81 BAV21WS=A82 Dimensions are in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS VALUE UNITS Continuous Reverse Voltage BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS VR VR VR VRRM VRRM VRRM IF 100 150 200 120 200 250 2501) 2001) Volts Volts Volts Volts Volts Volts mA Repetitive Peak Reverse Voltage Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Repetitive Peak Forward Current at f ≥ 50 Hz, Θ = 180 °, Tamb = 25 °C Surge Forward Current at t < 1 s, Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range NOTES: (1) Valid provided that electrodes are kept at ambient temperature Io mA IFRM IFSM Ptot Tj TS 6251) 1 2001) 1501) –65 to + 1501) mA Amps mW °C °C 12/11/98 BAV19WS THRU BAV21WS ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOL MIN. TYP. MAX. UNIT Forward voltage at IF = 100 mA at IF = 200mA Leakage Current at VR = 100 V at VR = 100 V, Tj = 100 °C at VR = 150 V at VR = 150 V, Tj = 100 °C at VR = 200 V at VR = 200 V, Tj = 100 °C Dynamic Forward Resistance at IF = 10 mA Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time from IF = 30 mA through IR = 30 mA to IR = 3 mA; RL = 100Ω Thermal Resistance Junction to Ambient Air BAV19WS BAV19WS BAV20WS BAV20WS BAV21WS BAV21WS VF VF IR IR IR IR IR IR rf Ctot – – – – – – – – – – – – – – – – – – 5 1.5 1.00 1.25 100 15.0 100 15.0 100 15.0 – – Volts Volts nA µA nA µA nA µA Ω pF trr – – 50 ns RthJA – – 6501) K/W NOTES: (1) Valid provided that electrodes are kept at ambient temperature RATINGS AND CHARACTERISTIC CURVES BAV19WS THRU BAV21WS ° RATINGS AND CHARACTERISTIC CURVES BAV19WS THRU BAV21WS Ω .


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