General Purpose Diodes
BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
High Voltage General Purpose Diode
Sourced from Process 1J.
Absolute Max...
Description
BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
High Voltage General Purpose Diode
Sourced from Process 1J.
Absolute Maximum Ratings*
Symbol
W IV Working Inverse Voltage
TA = 25°C unless otherwise noted
Parameter
BAV19 BAV20 BAV21
Value
100 150 200 200 500 600 1.0 4.0 -65 to +200 175
Units
V V V mA mA mA A A °C °C
IO IF if if(surge)
Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
Tstg TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
BAV19 / 20 / 21 500 3.33 300
Units
mW mW/°C °C/W
2000 Fairchild Semiconductor International
BAV19/20/21, Rev. A
BAV19 / BAV20 / BAV21
High Voltage General Purpose Diode
(continued)
Electrical Characteristics
Symbol
BV
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage BAV19 BAV20 BAV21 BAV19 BAV20 BAV21
Test Conditions
IR = 100 µ A IR = 100 µ A IR = 100 µ A VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = ...
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