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BAV19WS

General Semiconductor

SMALL SIGNAL DIODES

NEW PRODUCT NEW PRODUCT NEW PRODUCT BAV19WS THRU BAV21WS SMALL SIGNAL DIODES SOD-323 FEATURES ♦ Silicon Epitaxial Pl...


General Semiconductor

BAV19WS

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Description
NEW PRODUCT NEW PRODUCT NEW PRODUCT BAV19WS THRU BAV21WS SMALL SIGNAL DIODES SOD-323 FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the Mini-MELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designation BAS19 - BAS21 and the SOD-123 case with the type designation BAV19W-BAV21W. .012 (0.3) .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Cathode Mark Top View max. .049 (1.25) max. .004 (0.1) min. .010 (0.25) max. .006 (0.15) .059 (1.5) .043 (1.1) MECHANICAL DATA Case: SOD-323 Plastic Case Weight: approx. 0.004 g Marking Code: BAV19WS=A8 BAV20WS=A81 BAV21WS=A82 Dimensions are in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS VALUE UNITS Continuous Reverse Voltage BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS VR VR VR VRRM VRRM VRRM IF 100 150 200 120 200 250 2501) 2001) Volts Volts Volts Volts Volts Volts mA Repetitive Peak Reverse Voltage Forward DC Current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Repetitive Peak Forward Current at f ≥ 50 Hz, Θ = 180 °, Tamb = 25 °C Surge Forward Current at t < 1 s, Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range NOTES: (1) Valid p...




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