BAV170

Silicon Low Leakage Diode Array Low-leakage applications Medium speed switching times Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BAV170... BAV170 ! , ,  Type BAV170 Package SOT23 Configuration common cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation TS ≤ 35°C Junction temperature Storage temperature Ptot Tj Tstg Value 80 85 200 4.5 0.5 250 150 -65 ... 150 Unit V mA A mW °C Thermal Resistance Parameter Junction - soldering point2) BAV170 Symbol RthJS Value ≤ 460 Unit K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAV170... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Value...