BAV105

DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAV105 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification High-speed diode FEATURES Small hermetically sealed glass SMD package High switching speed: max. 6 ns General application Continuous reverse voltage: max. 60 V Repetitive peak reverse voltage: max. 60 V Repetitive peak forward current: max. 600 mA. APPLICATIONS High-speed switching in e.g. surface mounted circuits. Cathode indicated by black band. MAM061 BAV105 DESCRIPTION The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package. handbook, 4 columns k a Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1 500 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 60 60 300 600 V V mA mA UNIT 1996 Sep 17 2 Philips Semiconductors Product specifi...