BAV10

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product specification High-speed diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 6 ns General application Continuous reverse voltage: max. 60 V Repetitive peak reverse voltage: max. 60 V Repetitive peak forward current: max. 600 mA. The diode is type branded. handbook, halfpage k BAV10 DESCRIPTION The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1 350 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 60 60 300 600 V V mA mA UNIT 1996 Sep 16 2 Philips Semiconductors Product specification High-speed diode...