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BAT62-07L4

Infineon Technologies AG

Silicon Schottky Diode

Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • Pb-free (RoHS compliant) package BAT62...


Infineon Technologies AG

BAT62-07L4

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Description
Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies Pb-free (RoHS compliant) package BAT62... BAT62 "! , ,  BAT62-09S $# " , , ! BAT62-03W BAT62-02V BAT62-02W  BAT62-07W "! , ,  BAT62-02L BAT62-02LS 12 BAT62-07L4 4 D1 1 3 D2 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BAT62-02W** BAT62 BAT62-02L BAT62-02LS* BAT62-02V BAT62-03W BAT62-07L4 BAT62-07W BAT62-09S Package SCD80 SOT143 TSLP-2-1 TSSLP-2-1 SC79 SOD323 TSLP-4-4 SOT343 SOT363 Configuration single anti-parallel pair single, leadless single, leadless single single parallel pair, leadless parallel pair parallel high, high isolation LS(nH) 0.6 2 0.4 0.2 0.6 1.8 0.4 1.8 1.6 Marking 62 62s L U k white L 62 62s 69s * Preliminary Data ** Not for new design 1 2014-02-13 BAT62... Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation BAT62, TS ≤ 85 °C BAT62-02L, -07L4, -03W, TS ≤ 108 °C BAT62-02W, -02V, TS ≤ 109 °C BAT62-07W, TS ≤ 103 °C BAT62-09S, TS ≤ 105 °C VR IF Ptot Junction temperature Storage temperature Tj Tstg Thermal Resistance Parameter Junction - soldering point1) BAT62 BAT62-02L, -07L4, -03W BAT62-02W, 02V BAT62-07W BAT62-09S Symbol RthJS Value 40 20 100 100 100 100 100 150 -55 ... 150 Value ≤ 650 ≤ 420 ≤ 410 ≤ 470 ≤ tbd Unit V mA °C Unit Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol ...




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