DISCRETE SEMICONDUCTORS
DATA SHEET
BAT56 Schottky barrier diode
Preliminary specification File under Discrete Semicondu...
DISCRETE SEMICONDUCTORS
DATA SHEET
BAT56
Schottky barrier diode
Preliminary specification File under Discrete Semiconductors, SC01 December 1993
Philips Semiconductors
Philips Semiconductors
Preliminary specification
Schottky barrier diode
FEATURES Low leakage current Low turn-on and high breakdown voltage Ultra-fast switching speed. DESCRIPTION Silicon epitaxial
Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package.
k a
BAT56
QUICK REFERENCE DATA SYMBOL VR IF VF IR Tj Cd PARAMETER continuous reverse voltage continuous forward current forward voltage reverse current junction temperature diode capacitance VR = 1 V IF = 1 mA VR = 60 V CONDITIONS MAX. 60 30 410 200 150 1.6 UNIT V mA mV nA °C pF
PIN CONFIGURATION
MAM058
Top view
Fig.1 Simplified outline (SOD123) and symbol.
December 1993
2
Philips Semiconductors
Preliminary specification
Schottky barrier diode
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tamb Tj PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature operating ambient temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms CONDITIONS − − − − −65 −65 − MIN. MAX. 60 30 100 250 +150 +150 150
BAT56
UNIT V mA mA mA °C...