BAT254

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D154 BAT254 Schottky barrier diode Product specification Supersedes data of 1996 Mar 19 1999 Apr 22 Philips Semiconductors Product specification Schottky barrier diode FEATURES Low forward voltage Guard ring protected Very small ceramic SMD package. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. bottom view Marking code: L4. side view top view handbook, 4 columns BAT254 DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic SMD package. cathode mark k k a a MAM214 Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms CONDITIONS − − − − −65 − −65 MIN. MAX. 30 200 300 600 +150 125 +125 V mA mA mA °C °C °C UNIT 1999 Apr 22 2 Philips Semiconductors Product specification Schottky barrier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR trr reverse current reverse recovery time VR = 25 V; note 1; see Fig.3 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; me...