BAT160A

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT160 series Schottky barrier double diodes Product specification Supersedes data of 1999 Mar 26 1999 Sep 20 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power switched-mode power supplies Rectification Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. 1 2 3 MSB002 - 1 BAT160 series PINNING BAT160 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT160A diode configuration (symbol). page 4 1 3 2 n.c. MGL171 age 4 page 4 1 3 2 n.c. MGL172 Fig.3 Top view BAT160C diode configuration (symbol). MARKING TYPE NUMBER BAT160A BAT160C BAT160S MARKING CODE AT160A AT160C AT160S page 4 1 2 n.c. 3 Fig.1 Simplified outline (SOT223) and pin configuration. MGL173 Fig.4 BAT160S diode configuration (symbol). 1999 Sep 20 2 Philips Semiconductors Product specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature tp = 8.3 ms; half sinewave; JEDEC method tp...