BAT15-099

Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features DBS mixer application to 12 GHz q Low noise figure q Low barrier type q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-099 Marking S5 Ordering Code (tape and reel) Q62702-A66 Pin Configuration Package1) P-SOT-143-4-6 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 55 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VR IF Ptot Tstg Top Values 4 110 100 – 55 … + 150 Unit V mA mW – 55 … + 150 ˚C Rth JA Rth JS ≤ ≤ 1090 930 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 01.97 BAT 15-099 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA/50 mA Symbol min. V(BR) VF – – ∆VF CT RF – – – 0.23 0.32 – – 5.5 – – 20 0.35 – mV pF Ω 4 Values typ. – max. – V Unit Semiconductor Group 2 BAT 15-099 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina If Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 15-099 S11-Parameters Typical impedance characteristics (with external bia...