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BAT15-090R

Siemens Semiconductor Group

Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)

Silicon Schottky Diodes q q q q BAT 15- … R Beam lead technology Low dimension High performance Low barrier ESD: Elec...


Siemens Semiconductor Group

BAT15-090R

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Description
Silicon Schottky Diodes q q q q BAT 15- … R Beam lead technology Low dimension High performance Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R Marking – Ordering Code Q62702-D1264 Q62702-D1272 Q62702-D1281 Q62702-D1290 Pin Configuration Package1) R Maximum Ratings Parameter Symbol Values BAT 15-020 R BAT 15-050 R Forward current Junction temperature Storage temperature range Operating temperature range IF Tj Tstg Top 100 175 – 65 … + 150 – 65 … + 150 BAT 15-090 R BAT 15-110 R 50 mA ˚C Unit 1) For detailed information see chapter Package Outlines. BAT 1515- … ... R BAT Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Diode capacitance VR = 0, f = 1 MHz CT BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R VF BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R FSSB – – – – rf BAT 15-020 R BAT 15-050 R BAT 15-090 R BAT 15-110 R – – – – 3.5 4.0 7.0 10.0 – – – – 6.0 6.5 6.5 7.0 – – – – Ω – – – – – – – – 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 – – – – – – – – dB – – – – 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V pF Values typ. max. Unit Forward voltage IF = 1 mA IF = 10 mA Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz f = 3.0 GHz BAT 15-020 R f = 6.0 GHz BAT 15-050 R f = 9.3 GHz BAT 15-090 R f = 16 GHz BAT 15-110 R Differential forward r...




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