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BAT140 Dataheets PDF



Part Number BAT140
Manufacturers NXP
Logo NXP
Description Schottky barrier double diodes
Datasheet BAT140 DatasheetBAT140 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D087 BAT140 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1997 Oct 03 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DE.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D087 BAT140 series Schottky barrier double diodes Product specification File under Discrete Semiconductors, SC01 1997 Oct 03 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION page BAT140 series PINNING BAT140 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 age page 4 1 3 2 n.c. MGL171 BAT140A diode configuration (symbol). 4 4 1 3 2 n.c. MGL172 Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. MARKING TYPE NUMBER BAT140A BAT140C BAT140S MARKING CODE AT140A AT140C AT140S Fig.1 1 Top view 2 3 MSB002 - 1 Fig.3 BAT140C diode configuration (symbol). Simplified outline (SOT223) and pin configuration. page 4 1 2 n.c. 3 MGL173 Fig.4 BAT140S diode configuration (symbol). 1997 Oct 03 2 Philips Semiconductors Product specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF IF(AV) continuous reverse voltage continuous forward current average forward current Tamb = 65 °C; Rth j-a = 80 K/W; note 1; VR(equiv) = 0.2 V; note 2 − − − PARAMETER CONDITIONS BAT140 series MIN. MAX. UNIT 40 1 1 V A A IFSM IRSM Tstg Tj Notes non-repetitive peak forward current t = 8.3 µs half sinewave; JEDEC method non-repetitive peak reverse current tp = 100 µs storage temperature junction temperature − − −65 − 10 0.5 +150 125 A A °C °C 1. Refer to SOT223 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.5 IF = 100 mA; note 1 IF = 1 A; note 1 IR Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 100 UNIT K/W reverse current diode capacitance VR = 10 V; note 1; see Fig.6 VR = 40 V; note 1; see Fig.6 VR = 4 V; f = 1 MHz; see Fig.7 280 460 15 60 65 330 500 40 300 80 mV mV µA µA pF PARAMETER CONDITIONS TYP. MAX. UNIT 1997 Oct 03 3 Philips Semiconductors Product specification Schottky barrier double diodes GRAPHICAL DATA BAT140 series 4 10 handbook, halfpage MLC388 4 10 handbook, halfpage MLC389 (1) (2) (3) IF (mA) 10 3 IR (µA) 10 3 10 2 (1) (2) (3) (4) 10 2 (4) 10 10 1 0 0.2 0.4 0.6 0.8 V F (V) (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. 1.0 1 0 10 20 30 V R (V) 40 (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. Fig.5 Forward current as a function of forward voltage; typical values. Fig.6 Reverse current as a function of reverse voltage; typical values. 10 3 handbook, halfpage MLC390 Cd (pF) 10 2 10 0 8 16 24 32 V (V) 40 R f = 1 MHz. Fig.7 Diode capacitance as a function of reverse voltage; typical values. 1997 Oct 03 4 Philips Semiconductors Product specification Schottky barrier double diodes PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads BAT140 series SOT223 D B E A X c y HE b1 v M A 4 Q A A1 1 e1 e 2 bp 3 w M B detail X Lp 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT223 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 1997 Oct 03 5 Philips Semiconductors Product specification Schottky barrier double diodes DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BAT140 series This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application inform.


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