BAS4

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS40LT1/D Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. BAS40LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 40 VOLTS SCHOTTKY BARRIER DIODES 3 1 2 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Symbol VR PF 225 1.8 TJ, Tstg – 55 to +150 mW mW/°C °C Value 40 Unit Volts CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) DEVICE MARKING BAS40LT1 = B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR VF VF VF Min 40 — — — — — Max — 5.0 1.0 380 500 1.0 Unit Volts pF µAdc mVdc mVdc Vdc Preferred devices are Motorola recommended choices for future use and best overall value. Thermal Clad is a registered trademark of the Bergquist Company. REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 BAS40LT1 100 IF, FORWARD CURRENT (mA) IR ,...